TK155E65Z
MOSFETs Silicon N-Channel MOS (DTMOS�)
TK155E65Z
1. Applications
•
Switching Power Supplies
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.)
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 ꢀ unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
650
±30
18
(Note 1)
(Note 1)
A
IDP
72
(Tc = 25 ꢀ)
PD
150
225
4.5
W
mJ
A
Single-pulse avalanche energy
Single-pulse avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(Note 2)
EAS
IAS
(Note 1)
(Note 1)
IDR
18
IDRP
Tch
72
150
-55 to 150
0.6
ꢀ
Storage temperature
Tstg
TOR
Mounting torque
Nꢁm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2022-02
©2019-2021
Toshiba Electronic Devices & Storage Corporation
2021-09-14
Rev.1.0
1