Datasheet > TK14E65W

TK14E65W

更新时间： 2024-09-25 01:19:31

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	338K
描述
isc N-Channel MOSFET Transistor

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中文翻译

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数据手册

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TK14E65W 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

TK14E65W，ITK14E65W

·FEATURES

·Low drain-source on-resistance:

RDS(on) ≤0.25Ω.

·Enhancement mode:

Vth =2.5 to 3.5V (VDS = 10 V, ID=0.69mA)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Switching Voltage Regulators

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

13.7

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

54.8

P_D

130

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(ch-c)

Rth(ch-a)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

0.962

83.3

Channel-to-ambient thermal resistance

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