Datasheet > TK125V65Z

TK125V65Z

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	465K
描述
N-ch MOSFET, 650 V, 0.125 Ω@10V, DFN 8 x 8, DTMOSⅥ

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TK125V65Z 数据手册

TK125V65Z

MOSFETs Silicon N-Channel MOS (DTMOS�)

TK125V65Z

1. Applications

•

Switching Power Supplies

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.)

(2) High-speed switching properties with the lower capacitance.

(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA)

3. Packaging and Internal Circuit

1: Gate

2: Source 1

3, 4: Source 2

5: Drain (heatsink)

Notice: Only use source 1 pin for

gate input signal return. Please

make sure that the main current

flows into the source 2 pin.

DFN8x8

4. Absolute Maximum Ratings (Note) (Ta = 25 ꢀ unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

650

±30

(Note 1)

IDP

(Tc = 25 ꢀ)

190

258

Single-pulse avalanche energy

Single-pulse avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 2)

EAS

IAS

(Note 1)

IDR

IDRP

Tch

150

-55 to 150

ꢀ

Storage temperature

Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2020-02

Toshiba Electronic Devices & Storage Corporation

2020-10-16

Rev.2.0

12 3 4 5 6 7...10

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