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TK110A10PL

更新时间： 2024-11-30 14:58:03

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TK110A10PL 数据手册

TK110A10PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK110A10PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 9.3 nC (typ.)

(3) Small output charge: Qoss = 32 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 9.1 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

Start of commercial production

2018-01

2021-01-27

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK110A65Z	TOSHIBA	获取价格	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220SIS, DT
TK110E10PL	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 0.0107 Ω@10V, TO-220, U-M
TK110E65Z	TOSHIBA	获取价格	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOS
TK110N65Z	TOSHIBA	获取价格	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-247, DTMOS
TK110P10PL	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 0.0106 Ω@10V, DPAK, U-MOS
TK110U65Z	TOSHIBA	获取价格	N-ch MOSFET, 650 V, 0.11 Ω@10V, TOLL, DTMOSⅥ
TK110Z65Z	TOSHIBA	获取价格	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-247-4L, DT
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