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TK095N65Z5 PDF预览

TK095N65Z5

更新时间: 2024-11-19 17:00:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 500K
描述
N-ch MOSFET, 650 V, 0.095 Ω@10V, TO-247, DTMOSⅥ

TK095N65Z5 数据手册

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TK095N65Z5  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK095N65Z5  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Fast reverse recovery time: trr = 115 ns (typ.)  
(2) Low drain-source on-resistance: RDS(ON) = 0.079 (typ.)  
(3) High-speed switching properties with lower capacitance.  
(4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.27 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
TO-247  
Start of commercial production  
2024-01  
©2022-2023  
2023-12-06  
Rev.4.0  
1
Toshiba Electronic Devices & Storage Corporation  

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