TK090Z65Z
MOSFETs Silicon N-Channel MOS (DTMOS)
TK090Z65Z
1. Applications
•
Switching Power Supplies
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.075 Ω (typ.)
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.27 mA)
3. Packaging and Internal Circuit
1. Drain (heatsink)
2. Source 1
3. Source 2
4. Gate
Notice: Only use source 2 pin for
gate input signal return. Please
make sure that the main current
flows into the source 1 pin.
TO-247-4L(T)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
650
±30
(Note 1)
(Note 1)
30
A
IDP
120
(Tc = 25 )
PD
230
W
mJ
A
Single-pulse avalanche energy
Single-pulse avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(Note 2)
EAS
IAS
265
7.5
(Note 1)
(Note 1)
IDR
30
IDRP
Tch
120
150
Storage temperature
Tstg
TOR
-55 to 150
0.8
Mounting torque
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2019-01
©2018
Toshiba Electronic Devices & Storage Corporation
2018-11-20
Rev.1.0
1