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TK040N65Z PDF预览

TK040N65Z

更新时间: 2024-11-02 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 485K
描述
N-ch MOSFET, 650 V, 0.04 Ω@10V, TO-247, DTMOSⅥ

TK040N65Z 数据手册

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TK040N65Z  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK040N65Z  
1. Applications  
Switching Power Supplies  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.)  
(2) High-speed switching properties with lower capacitance.  
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 2.85 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
TO-247  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
650  
±30  
(Note 1)  
(Note 1)  
57  
A
IDP  
228  
(Tc = 25 )  
PD  
360  
W
mJ  
A
Single-pulse avalanche energy  
Single-pulse avalanche current  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
(Note 2)  
EAS  
IAS  
702  
14.2  
57  
(Note 1)  
(Note 1)  
IDR  
IDRP  
Tch  
228  
150  
Storage temperature  
Tstg  
TOR  
-55 to 150  
0.8  
Mounting torque  
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2018-07  
©2017-2018  
Toshiba Electronic Devices & Storage Corporation  
2018-07-18  
Rev.2.0  
1

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