Datasheet > TJ90S04M3L

TJ90S04M3L

更新时间： 2024-11-10 14:57:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	856K
描述
P-ch MOSFET, -40 V, -90 A, 0.0043 Ω@10V, DPAK+

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TJ90S04M3L 数据手册

TJ90S04M3L

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ90S04M3L

1. Applications

•

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(4) Enhancement mode: Vth = -1.0 to -2.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-40

+10/-20

-90

(Note 1)

(Note 2)

(Note 3)

IDP

-180

(Tc = 25 )

180

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

EAS

IAS

156

-90

(Note 4)

Tch

Tstg

175



Storage temperature

-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2017-01

Toshiba Electronic Devices & Storage Corporation

2020-06-24

Rev.5.0

12 3 4 5 6 7...10

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