Datasheet > TJ15S10M3

TJ15S10M3

更新时间： 2024-11-20 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	260K
描述
P-ch MOSFET, -100 V, -15 A, 0.13 Ω@10V, DPAK+

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TJ15S10M3 数据手册

TJ15S10M3

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ15S10M3

1. Applications

•

Automotive

Switching Voltage Regulators

Motor Drivers

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V)

(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)

(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (HeatSink)

3: Source

DPAK+

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-100

-20/+10

-15

(Note 1)

IDP

-30

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

29.3

-15

Channel temperature

Storage temperature

(Note 3)

Tch

Tstg

175



-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2013-12

Toshiba Electronic Devices & Storage Corporation

2017-12-08

Rev.6.0

12 3 4 5 6 7...9

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