Datasheet > TJ15P04M3

TJ15P04M3

更新时间： 2024-11-08 14:58:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	248K
描述
P-ch MOSFET, -40 V, 0.036 Ω@10V, DPAK, U-MOSⅥ

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TJ15P04M3 数据手册

TJ15P04M3

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ15P04M3

1. Applications

•

Motor Drivers

•

Power Management Switches

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)

(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-40

±20

(Note 1)

-15

IDP

-45

(Tc = 25)

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

(Note 2)

EAS

IAS

-15

Tch

Tstg

150



Storage temperature

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2010-01

2015-04-07

Rev.3.0

12 3 4 5 6 7...9

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