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TISP6NTP2BDR PDF预览

TISP6NTP2BDR

更新时间： 2024-01-20 19:32:10
品牌 Logo 应用领域
伯恩斯 - BOURNS 电信光电二极管电信集成电路
页数 文件大小 规格书
8页 293K
描述
Surge Protection Circuit, PDSO8, PLASTIC, MS-012, SO-8

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TISP6NTP2BDR 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：PLASTIC, MS-012, SO-8
针数：8Reach Compliance Code：not_compliant
HTS代码：8542.39.00.01风险等级：5.81
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.9 mm功能数量：1
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.75 mm
表面贴装：YES电信集成电路类型：SURGE PROTECTION CIRCUIT
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.905 mmBase Number Matches：1

TISP6NTP2BDR 数据手册

 浏览型号TISP6NTP2BDR的Datasheet PDF文件第2页浏览型号TISP6NTP2BDR的Datasheet PDF文件第3页浏览型号TISP6NTP2BDR的Datasheet PDF文件第4页浏览型号TISP6NTP2BDR的Datasheet PDF文件第5页浏览型号TISP6NTP2BDR的Datasheet PDF文件第6页浏览型号TISP6NTP2BDR的Datasheet PDF文件第7页 
TISP6NTP2B  
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS  
TISP6NTP2B Programmable Protector  
Overvoltage Protection for ISDN DC Feeds:  
– Supply Voltages Down to -120 V  
D Package (Top View)  
– Low 5 mA max. Gate Triggering Current  
– High 150 mA min. (25 °C) Holding Current  
1
2
3
4
8
7
6
5
K2  
A
K1  
G1,G2  
G3,G4  
K3  
Rated for Common Impulse Waveforms  
A
I
K4  
Voltage Impulse  
Form  
Current Impulse  
Shape  
TSP  
A
MDRXAM  
10/1000 µs  
10/700 µs  
1.2/50 µs  
2/10 µs  
10/1000 µs  
5/310 µs  
8/20 µs  
20  
25  
60  
70  
Device Symbol  
K1  
2/10 µs  
.............................................. UL Recognized Component  
G1,G2  
Description  
The TISP6NTP2B has an array of four buffered P-gate forward  
conducting thyristors with twin commoned gates and a common  
anode connection. Each thyristor cathode has a separate  
terminal connection. An antiparallel anode-cathode diode is  
connected across each thyristor. The buffer transistors reduce  
the gate supply current.  
K2  
A
A
K3  
In use, the cathodes of an TISP6NTP2B thyristors are connected  
to the four conductors to be protected (see Figure 2 and Figure  
3). Each gate is connected to the appropriate negative voltage  
feed. The anode of the TISP6NTP2B is connected to the system  
common. The TISP6NTP2B is in an 8-pin small-outline surface  
mount package.  
G3,G4  
Positive overvoltages are clipped to common by forward  
conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a  
negative overvoltage draws a current through the 6.8 Ω resistor  
and the voltage developed triggers the thyristor on. In Figure 3,  
negative overvoltages are initially clipped close to the negative  
supply by emitter follower action of the TISP6NTP2B buffer  
transistor. If sufficient clipping current flows, the TISP6NTP2B  
thyristor will regenerate and switch into a low voltage on-state  
condition. As the negative overvoltage subsides, the high  
holding current of the TISP6NTP2B prevents d.c. latchup.  
SDRXAI  
K4  
How To Order  
For Standard  
For Lead Free  
Termination Finish Termination Finish  
Order As  
Order As  
Device  
Package  
Carrier  
Tape and Reel TISP6NTP2BDR  
TISP6NTP2BDR-S  
TISP6NTP2BD-S  
TISP6NTP2B D, Small-Outline  
Tube  
TISP6NTP2BD  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
JUNE 1998 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
12345678

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