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TISP4250M3AJ

更新时间： 2024-11-19 04:49:27
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
14页 422K
描述
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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中文翻译

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TISP4250M3AJ 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-214AC
包装说明：SMALL OUTLINE, R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.12
其他特性：UL RECOGNIZED最大转折电压：250 V
配置：SINGLE最大断态直流电压：190 V
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
JESD-609代码：e0通态非重复峰值电流：24 A
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP4250M3AJ 数据手册

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TISP4070M3AJ THRU TISP4115M3AJ,  
TISP4125M3AJ THRU TISP4220M3AJ,  
TISP4240M3AJ THRU TISP4395M3AJ  
T
N
A
I
L
P
S
M
N
E
O
O
L
I
C
B
S
S
A
R
H
L
E
I
o
*R  
V
A
V
A
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP4xxxM3AJ Overvoltage Protector Series  
4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating  
SMAJ Package (Top View)  
SMA (DO-214AC) Package  
25% Smaller Placement Area than SMB  
Low Differential Capacitance .......................................... 39 pF  
R (B)  
1
2 T (A)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
MDXXCCE  
V
V
DRM  
(BO)  
Device  
Device Symbol  
V
V
T
‘4070  
‘4080  
‘4090  
‘4095  
‘4115  
‘4125  
‘4145  
‘4165  
‘4180  
‘4200  
‘4220  
‘4240  
‘4250  
‘4265  
‘4290  
‘4300  
‘4320  
‘4350  
‘4360  
‘4395  
58  
65  
68  
75  
90  
70  
80  
90  
95  
115  
125  
145  
165  
180  
200  
220  
240  
250  
265  
290  
300  
320  
350  
360  
395  
SD4XAA  
100  
120  
135  
145  
155  
160  
180  
190  
200  
220  
230  
240  
275  
290  
320  
R
T
erminals T and R correspond to the  
alternative line designators of A and B  
Rated for International Surge Wave Shapes  
I
TSP  
A
Wave Shape  
Standard  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
300  
220  
120  
100  
75  
10/160 µs  
10/700 µs  
10/560 µs  
10/1000 µs  
ITU-T K.20/21/45  
FCC Part 68  
GR-1089-CORE  
50  
............................................ UL Recognized Components  
How To Order  
For Standard  
For Lead Free  
Termination Finish Termination Finish  
Order As  
Order As  
Device  
Package  
Carrier  
Embossed Tape Reeled TISP4xxxM3AJR TISP4xxxM3AJR-S  
TISP4xxxM3AJ AJ(J-Bend DO-214AC/SMA)  
Insert xxx value corresponding to protection voltages of 070, 080, 095, etc.  
Description  
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning  
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used  
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of  
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the  
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the  
diverted current subsides.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
AUGUST 2001 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234567...14

中文翻译

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