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TISP4240M3BJ

更新时间： 2024-11-18 22:42:15
品牌 Logo 应用领域
POINN 光电二极管
页数 文件大小 规格书
14页 313K
描述
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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TISP4240M3BJ 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-C2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.6
Is Samacsys：N最大转折电压：240 V
配置：SINGLE最大断态直流电压：180 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
通态非重复峰值电流：32 A元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified表面贴装：YES
端子形式：C BEND端子位置：DUAL
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP4240M3BJ 数据手册

 浏览型号TISP4240M3BJ的Datasheet PDF文件第2页浏览型号TISP4240M3BJ的Datasheet PDF文件第3页浏览型号TISP4240M3BJ的Datasheet PDF文件第4页浏览型号TISP4240M3BJ的Datasheet PDF文件第5页浏览型号TISP4240M3BJ的Datasheet PDF文件第6页浏览型号TISP4240M3BJ的Datasheet PDF文件第7页 
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,  
TISP4240M3BJ THRU TISP4400M3BJ  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
Copyright © 1999, Power Innovations Limited, UK  
NOVEMBER 1997 - REVISED MARCH 1999  
TELECOMMUNICATION SYSTEM 50 A 10/1000 OVERVOLTAGE PROTECTORS  
●
●
4 kV 10/700, 100 A 5/310 ITU-T K20/21 rating  
SMBJ PACKAGE  
(TOP VIEW)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
1
2
T(A)  
R(B)  
V
V
(BO)  
DRM  
DEVICE  
V
V
MDXXBG  
‘4070  
‘4080  
‘4095  
‘4125  
‘4145  
‘4165  
‘4180  
‘4200  
‘4240  
‘4265  
‘4300  
‘4350  
‘4400  
58  
65  
75  
70  
80  
95  
device symbol  
100  
120  
135  
145  
155  
180  
200  
230  
275  
300  
125  
145  
165  
180  
200  
240  
265  
300  
350  
400  
T
SD4XAA  
R
erminals T and R correspond to the  
T
alternative line designators of A and B  
●
Rated for International Surge Wave Shapes  
I
TSP  
WAVE SHAPE  
STANDARD  
A
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
300  
220  
120  
100  
75  
10/160 µs  
10/700 µs  
10/560 µs  
10/1000 µs  
ITU-T K20/21  
FCC Part 68  
GR-1089-CORE  
50  
●
●
Low Differential Capacitance . . . 43 pF max.  
UL Recognized, E132482  
description  
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by  
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A  
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication  
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can  
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially  
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to  
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the  
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup  
as the diverted current subsides.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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TISP4240M3LMFR-S BOURNS

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 		Silicon Surge Protector, 240V V(BO) Max, 2.1A, DO-92, ROHS COMPLIANT, PLASTIC, LMF PACKAGE
TISP4240M3LMR BOURNS

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 		BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4240M3LMR-S BOURNS

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