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TISP4040H1BJ PDF预览

TISP4040H1BJ

更新时间: 2024-11-19 21:20:39
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
8页 135K
描述
Silicon Surge Protector, 40 V, 50 A, SILICON SURGE PROTECTOR, DO-214AA, PLASTIC, SMBJ, 2 PIN

TISP4040H1BJ 技术参数

生命周期:Obsolete零件包装代码:DO-214AA
包装说明:SMALL OUTLINE, R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.39
最大转折电压:40 V配置:SINGLE
最大断态直流电压:25 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2通态非重复峰值电流:50 A
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:C BEND
端子位置:DUAL触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TISP4040H1BJ 数据手册

 浏览型号TISP4040H1BJ的Datasheet PDF文件第2页浏览型号TISP4040H1BJ的Datasheet PDF文件第3页浏览型号TISP4040H1BJ的Datasheet PDF文件第4页浏览型号TISP4040H1BJ的Datasheet PDF文件第5页浏览型号TISP4040H1BJ的Datasheet PDF文件第6页浏览型号TISP4040H1BJ的Datasheet PDF文件第7页 
TISP4030H1BJ, TISP4040H1BJ  
EXPERIMENTAL SAMPLE DATA  
BIDIRECTIONAL OVERVOLTAGE PROTECTORS  
AUGUST 1999 - REVISED MARCH 2000  
SELV TELECOMMUNICATION LINE OVERVOLTAGE PROTECTION  
G
G
Digital Line Protection  
— ISDN  
— xDSL  
SMBJ PACKAGE  
(TOP VIEW)  
Safety Extra Low Voltage, SELV, values  
1
2
T(A)  
R(B)  
VDRM  
V(BO)  
DEVICE  
V
V
MDXXBG  
‘4030  
‘4040  
15  
25  
30  
40  
device symbol  
T
G
G
High Current “H” Series for GR-1089-CORE  
ITSP  
WAVE SHAPE  
STANDARD  
A
10/1000 µs  
GR-1089-CORE  
100  
SD4XAA  
100 A to 75 A Functional Replacements for  
R
FUNCTIONAL  
DEVICE TYPE  
erminals T and R correspond to the  
alternative line designators of A and B  
T
REPLACEMENT  
P0300SC  
TISP4040H1BJ  
P0300SB  
description  
These devices are designed to limit overvoltages  
on digital lines. Overvoltages are normally  
caused by a.c. power system or lightning flash  
disturbances which are induced or conducted on  
to the telephone line. A single device provides 2-  
point protection and is typically used for the  
protection of transformer windings and low  
voltage electronics.  
The protector consists of a symmetrical voltage-  
triggered bidirectional thyristor. Overvoltages are  
initially clipped by breakdown clamping until the  
voltage rises to the breakover level, which  
causes the device to crowbar into a low-voltage  
on state. This low-voltage on state causes the  
current resulting from the overvoltage to be  
safely diverted through the device. The device  
switches off when the diverted current subsides  
falls below the holding current value.  
Copyright © 2000 Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in  
the sampling or preproduction phase of development.  
Characteristic data and other specifications are  
subject to change without notice.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under private  
label for Texas Instruments.  
1

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