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TISP4025H1BJR-S PDF预览

TISP4025H1BJR-S

更新时间： 2024-11-19 19:51:03
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
9页 600K
描述
Silicon Surge Protector,

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TISP4025H1BJR-S 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：7 weeks风险等级：1.76
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP4025H1BJR-S 数据手册

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TISP4015H1BJ, TISP4025H1BJ, TISP4030H1BJ, TISP4040H1BJ  
VERY LOW VOLTAGE  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP40xxH1BJ VLV Overvoltage Protector Series  
Low Capacitance  
SMBJ Package (Top View)  
‘4015.................................................................................... 78 pF  
‘4030.................................................................................... 62 pF  
‘4040.................................................................................... 59 pF  
1
2
T(A)  
R(B)  
Digital Line Signal Level Protection  
-ISDN  
-xDSL  
MDXXBGE  
Safety Extra Low Voltage, SELV, values  
V
V
Device Symbol  
DRM  
V
(BO)  
V
Device  
T
‘40 5  
‘4025  
‘4010  
‘4040  
± ±ꢀ  
± ± 1  
± ± 5  
± ±25  
± ± 5  
± ±25  
± ±10  
± ±40  
SD4XAA  
100 A “H” Series specified for:  
R
ITU-T recommendations K.20, K.45, K.21  
FCC Part 68 and GR-1089-CORE  
T
erminals T and R correspond to the  
alternative line designators of A and B  
I
TSP  
Wave Shape  
Standard  
A
2/10 μs  
8/20 μs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
500  
400  
200  
...........................................UL Recognized Components**  
10/160 μs  
ITU-T K.20/45/21  
FCC Part 68  
10/700 μs  
150  
10/560 μs  
FCC Part 68  
125  
100  
10/1000 μs  
GR-1089-CORE  
Description  
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or  
lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically  
used for the protection of transformer windings and low voltage electronics.  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state  
causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current  
falls below the holding current value.  
How to Order  
Device  
Package  
Carrier  
Marking Code Std. Qty.  
40xxH1 3000  
Order As  
TISP40xxH1BJ SMB (DO-214AA) Embossed Tape Reeled TISP40xxH1BJR-S  
Insert xx value corresponding to protection voltages of 15 V, 30 V and 40 V.  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
** TISP4025H1BJ UL Recognition pending.  
AUGUST 1999 - REVISED OCTOBER 2015  
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.  
Users should verify actual device performance in their specific applications.  
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