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TISP4015H1BJ PDF预览

TISP4015H1BJ

更新时间: 2024-11-19 20:11:19
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
8页 161K
描述
15V, 50A, SILICON SURGE PROTECTOR, DO-214AA, PLASTIC, SMBJ, 2 PIN

TISP4015H1BJ 技术参数

生命周期:Obsolete零件包装代码:DO-214AA
包装说明:SMALL OUTLINE, R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.39
最大转折电压:15 V配置:SINGLE
最大断态直流电压:8 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2通态非重复峰值电流:50 A
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:C BEND
端子位置:DUAL触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TISP4015H1BJ 数据手册

 浏览型号TISP4015H1BJ的Datasheet PDF文件第2页浏览型号TISP4015H1BJ的Datasheet PDF文件第3页浏览型号TISP4015H1BJ的Datasheet PDF文件第4页浏览型号TISP4015H1BJ的Datasheet PDF文件第5页浏览型号TISP4015H1BJ的Datasheet PDF文件第6页浏览型号TISP4015H1BJ的Datasheet PDF文件第7页 
TISP4015H1BJ, TISP4020H1BJ  
ULTRA-LOW & VERY-LOW VOLTAGE  
BIDIRECTIONAL OVERVOLTAGE PROTECTORS  
AUGUST 1999 - REVISED FEBRUARY 2000  
SELV TELECOMMUNICATION LINE OVERVOLTAGE PROTECTION  
G
G
Digital Line Protection  
— ISDN  
— xDSL  
SMBJ PACKAGE  
(TOP VIEW)  
Safety Extra Low Voltage, SELV, values  
— Ultra-Low & Very-Low Voltage Parts  
1
2
T(A)  
R(B)  
V
V
(BO)  
DRM  
MDXXBG  
DEVICE  
V
5
8
V
‘4015  
‘4020  
15  
20  
device symbol  
T
G
High Current “H” Series for ITU-T K20,  
FCC Part 68 and GR-1089-CORE  
I
TSP  
WAVE SHAPE  
STANDARD  
A
SD4XAA  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
500  
400  
200  
R
erminals T and R correspond to the  
alternative line designators of A and B  
T
10/160 µs  
ITU-T K20/21  
FCC Part 68  
10/700 µs  
150  
10/560 µs  
FCC Part 68  
125  
100  
10/1000 µs  
GR-1089-CORE  
G
Functional Replacements for  
DEVICE TYPE  
P0080Sx (1998 version)  
P0080Sx (1999 version)  
SMP100-8, SMP75-8  
(See Note 1)  
FUNCTIONAL REPLACEMENT  
TISP4015H1BJ  
TISP4020H1BJ  
TISP4020H1BJ  
NOTE 1. The TISP4020H1BJ has a higher a.c. V  
(BO)  
than SMP75-8, but has the same impulse  
V
.
(BO)  
description  
This device is designed to limit overvoltages on digital lines. Overvoltages are normally caused by a.c. power  
system or lightning flash disturbances which are induced or conducted on to the telephone line. A single  
device provides 2-point protection and is typically used for the protection of transformer windings and low  
voltage electronics.  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially  
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to  
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the  
overvoltage to be safely diverted through the device. The device switches off when the diverted current  
subsides falls below the holding current value.  
Copyright © 2000 Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in  
the sampling or preproduction phase of development.  
Characteristic data and other specifications are  
subject to change without notice.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under private  
label for Texas Instruments.  
1

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