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TISP3082

更新时间： 2024-11-19 20:08:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网
页数 文件大小 规格书
12页 704K
描述
Silicon Surge Protector, 82V V(BO) Max, 10A, TO-220AB, TO-220, 3 PIN

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中文翻译

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TISP3082 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.79Is Samacsys：N
其他特性：UL RECOGNIZED最大转折电压：82 V
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTSJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3通态非重复峰值电流：10 A
元件数量：2端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP3082 数据手册

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T
TISP3072F3,TISP3082F3  
N
A
I
L
P
M
O
C
S
H
o
R
*
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR  
OVERVOLTAGE PROTECTORS  
TISP30xxF3 (LV) Overvoltage Protector Series  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D Package (Top View)  
Low Voltage Overshoot under Surge  
G
G
G
G
T
NC  
NC  
R
1
8
7
6
5
V
V
(BO)  
2
DRM  
DEVICE  
V
V
3
4
‘3072F3  
‘3082F3  
58  
66  
72  
82  
NC - No internal connection  
Planar Passivated Junctions  
Low Off-State Current <10 µA  
Device Symbol  
Rated for International Surge Wave Shapes  
T
R
I
TSP  
A
Waveshape  
Standard  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
80  
70  
60  
10/160 µs  
ITU-T K.20/21  
FCC Part 68  
SD3XAA  
10/700 µs  
50  
G
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
10/560 µs  
FCC Part 68  
45  
35  
10/1000 µs  
GR-1089-CORE  
.............................................. UL Recognized Component  
Description  
These low-voltage dual bidirectional thyristor protectors are  
designed to protect ISDN applications against transients caused  
by lightning strikes and a.c. power lines. Offered in two voltage  
variants to meet battery and protection requirements, they are  
guaranteed to suppress and withstand the listed international  
lightning surges in both polarities. Transients are initially clipped  
by breakdown clamping until the voltage rises to the breakover  
level, which causes the device to crowbar. The high crowbar  
holding current prevents d.c. latchup as the current subsides.  
These monolithic protection devices are fabricated in  
ion-implanted planar structures to ensure precise and matched  
breakover control and are virtually transparent to the system in  
normal operation.  
How To Order  
Device  
Package  
Carrier  
Order As  
TISP30xxF3 D, Small-outline Tape And Reeled  
TISP30xxF3DR-S  
Insert xx value corresponding to protection voltages of 72 and 82  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
MARCH 1994 - REVISED SEPTEMBER 2008  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234567...12

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