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TIP50AN PDF预览

TIP50AN

更新时间: 2024-11-26 18:54:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
61页 396K
描述
1A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

TIP50AN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.18外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

TIP50AN 数据手册

 浏览型号TIP50AN的Datasheet PDF文件第2页浏览型号TIP50AN的Datasheet PDF文件第3页浏览型号TIP50AN的Datasheet PDF文件第4页浏览型号TIP50AN的Datasheet PDF文件第5页浏览型号TIP50AN的Datasheet PDF文件第6页浏览型号TIP50AN的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for line operated audio output amplifier, Switchmode power supply  
drivers and other switching applications.  
*Motorola Preferred Device  
250 V to 400 V (Min) — V  
CEO(sus)  
1 A Rated Collector Current  
1.0 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
Popular TO–220 Plastic Package  
MAXIMUM RATINGS  
Rating  
250300350400 VOLTS  
40 WATTS  
Symbol TIP47  
TIP48  
300  
TIP49  
350  
TIP50  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
250  
350  
CEO  
V
400  
450  
500  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
1.0  
2.0  
Base Current  
I
B
0.6  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
CASE 221A–06  
TO–220AB  
Derate above 25 C  
Unclamped Inducting Load  
Energy (See Figure 8)  
E
20  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
3.125  
62.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
R
θJC  
θJA  
Thermal Resistance, Junction to Ambient  
R
T
A
T
C
4
3
2
40  
30  
20  
T
C
T
A
1
0
10  
0
0
20  
40  
60  
100  
120  
140  
160  
80  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–887  
Motorola Bipolar Power Transistor Device Data  

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