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TIP47

更新时间： 2024-09-24 22:49:51
品牌 Logo 应用领域
POINN 晶体晶体管开关局域网
页数 文件大小 规格书
7页 122K
描述
NPN SILICON POWER TRANSISTORS

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中文翻译

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TIP47 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.82
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：250 V配置：DARLINGTON
最小直流电流增益 (hFE)：10JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON

TIP47 数据手册

 浏览型号TIP47的Datasheet PDF文件第2页浏览型号TIP47的Datasheet PDF文件第3页浏览型号TIP47的Datasheet PDF文件第4页浏览型号TIP47的Datasheet PDF文件第5页浏览型号TIP47的Datasheet PDF文件第6页浏览型号TIP47的Datasheet PDF文件第7页 
TIP47, TIP48, TIP49, TIP50  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
DECEMBER 1971 - REVISED MARCH 1997  
●
●
●
●
40 W at 25°C Case Temperature  
1 A Continuous Collector Current  
2 A Peak Collector Current  
TO-220 PACKAGE  
(TOP VIEW)  
1
2
3
B
C
E
20 mJ Reverse-Energy Rating  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP47  
TIP48  
TIP49  
TIP50  
TIP47  
TIP48  
TIP49  
TIP50  
350  
400  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
450  
500  
250  
300  
VCEO  
V
350  
400  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
1
2
A
0.6  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
40  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
20  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
260  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTE 1: This value applies for tp £ 1 ms, duty cycle £ 2%.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
1234567

中文翻译

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