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TIP34C

更新时间: 2024-11-03 08:48:39
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COMPLEMENTARY SILICON POWER TRANSISTORS

TIP34C 数据手册

 浏览型号TIP34C的Datasheet PDF文件第2页浏览型号TIP34C的Datasheet PDF文件第3页浏览型号TIP34C的Datasheet PDF文件第4页 
Order this document  
by TIP33B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general–purpose power amplifier and switching applications.  
10 A Collector Current  
Low Leakage Current — I  
= 0.7 mA @ 60 V  
CEO  
= 40 Typ @ 3.0 A  
Excellent dc Gain — h  
FE  
*Motorola Preferred Device  
High Current Gain Bandwidth Product — h = 3.0 min @ I = 0.5 A, f = 1.0 MHz  
fe  
C
10 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
100 VOLTS  
MAXIMUM RATINGS  
TIP33B  
TIP34B  
TIP33C  
TIP34C  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
80 V  
100 V  
100 V  
80 WATTS  
V
80 V  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak (1)  
I
C
10  
15  
Base Current — Continuous  
Total Power Dissipation  
I
3.0  
Adc  
B
P
D
@ T = 25 C  
80  
0.64  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
CASE 340D–01  
TO–218AC  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.56  
35.7  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Junction–To–Free–Air Thermal Resistance  
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  
R
R
θJC  
θJA  
10%.  
500  
V
= 4.0 V  
= 25°C  
200  
100  
CE  
T
J
50  
20  
10  
NPN  
PNP  
5.0  
0.1  
1.0  
10  
I
, COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

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