5秒后页面跳转
TIP34C PDF预览

TIP34C

更新时间: 2024-09-27 08:48:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
4页 106K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

TIP34C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-218AC包装说明:CASE 340D-02, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.34
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-218AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP34C 数据手册

 浏览型号TIP34C的Datasheet PDF文件第2页浏览型号TIP34C的Datasheet PDF文件第3页浏览型号TIP34C的Datasheet PDF文件第4页 
Order this document  
by TIP33B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general–purpose power amplifier and switching applications.  
10 A Collector Current  
Low Leakage Current — I  
Excellent dc Gain — h  
High Current Gain Bandwidth Product — h = 3.0 min @ I = 0.5 A, f = 1.0 MHz  
= 0.7 mA @ 60 V  
CEO  
= 40 Typ @ 3.0 A  
FE  
*Motorola Preferred Device  
fe  
C
10 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
100 VOLTS  
MAXIMUM RATINGS  
TIP33B  
TIP34B  
TIP33C  
TIP34C  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
80 V  
100 V  
100 V  
80 WATTS  
V
80 V  
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak (1)  
I
C
10  
15  
Base Current — Continuous  
Total Power Dissipation  
I
3.0  
Adc  
B
P
D
@ T = 25 C  
80  
0.64  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
CASE 340D–02  
TO–218AC  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.56  
35.7  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Junction–To–Free–Air Thermal Resistance  
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  
R
R
θJC  
θJA  
10%.  
500  
V
T
= 4.0 V  
200  
100  
CE  
= 25°C  
J
50  
20  
10  
NPN  
PNP  
5.0  
0.1  
1.0  
10  
I
, COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996

与TIP34C相关器件

型号 品牌 获取价格 描述 数据表
TIP34CF TRSYS

获取价格

NPN POWER TRANSISTORS
TIP34CF CDIL

获取价格

TO-3P Fully Isolated Plastic Package Transistor CDIL
TIP34CPNP CDIL

获取价格

HIGH POWER TRANSISTORS
TIP34D MOSPEC

获取价格

POWER TRANSISTORS(10A,120-160V,80W)
TIP34E MOSPEC

获取价格

POWER TRANSISTORS(10A,120-160V,80W)
TIP34F TRSYS

获取价格

NPN POWER TRANSISTORS
TIP34F MOSPEC

获取价格

POWER TRANSISTORS(10A,120-160V,80W)
TIP34F CDIL

获取价格

TO-3P Fully Isolated Plastic Package Transistor CDIL
TIP34LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic
TIP34PNP CDIL

获取价格

HIGH POWER TRANSISTORS