Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH POWER TRANSISTORS
TIP33, A, B, C NPN
TIP34, A, B, C PNP
TO- 3PN Non Isolated
Plastic Package
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
TIP33
TIP34
TIP33A
TIP34A
TIP33B
TIP34B
TIP33C
UNIT
DESCRIPTION
SYMBOL
TIP34C
VCEO
VCBO
VEBO
IC
*ICM
IB
100
100
Collector Emitter Voltage
Collector Base Voltage
40
40
60
60
80
80
V
V
5.0
Emitter Base Voltage
V
10
15
3.0
80
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Total Power Dissipation at Tc=25ºC
Derate Above 25ºC
A
A
A
PD
W
W/ºC
0.64
Operating and Storage Junction
Temperature Range
Tj, Tstg
- 65 to +150
ºC
*Pulse test: Pulse width = 10ms , Duty cycle <10%
THERMAL CHARACTERISTICS
Rth (j-c)
1.56
35.7
Thermal Resistance, Junction to Case
junction to Free Air Thermal Resistance
ºC/W
ºC/W
Rth (j-a)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
MIN
TYP
MAX
DESCRIPTION
SYMBOL
TEST CONDITION
UNIT
**VCEO (sus)
IC=30mA, IB=0
Collector Emitter Sustaining Voltage
TIP33/TIP34
TIP33A/TIP34A
TIP33B/TIP34B
TIP33C/TIP34C
VCE=30V, IB=0
40
60
80
V
V
V
V
100
ICEO
Collector Emitter Cut Off Current
TIP33/A, TIP34/A
0.7
mA
VCE=60V, IB=0
TIP33B/C, TIP34B/C
VCE=Rated VCEO, VEB=0
0.7
0.4
1.0
mA
mA
mA
ICES
IEBO
Collector Emitter Cut Off Current
Emitter Base Cut Off Current
DC Current Gain
VEB=5V, IC=0
IC=1A, VCE=4V
IC=3A, VCE=4V
IC=3A, IB=0.3A
IC=10A, IB=2.5A
IC=3A, VCE=4V
IC=10A, VCE=4V
**hFE
40
20
100
1.0
4.0
1.6
3.0
**VCE (sat)
**VBE (on)
Collector Emitter Saturation Voltage
Base Emitter On Voltage
V
V
V
V
**Pulse test: Pulse width 300ms, Duty cycle <2%
TIP33_34Rev110706E
Data Sheet
Page 1 of 4
Continental Device India Limited