TIP33B

更新时间： 2024-09-27 03:59:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管局域网
页数	文件大小	规格书
4页	108K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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TIP33B 数据手册

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by TIP33B/D

SEMICONDUCTOR TECHNICAL DATA

. . . for general–purpose power amplifier and switching applications.

•

10 A Collector Current

Low Leakage Current — I

= 0.7 mA @ 60 V

CEO

= 40 Typ @ 3.0 A

Excellent dc Gain — h

*Motorola Preferred Device

High Current Gain Bandwidth Product — h = 3.0 min @ I = 0.5 A, f = 1.0 MHz

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

MAXIMUM RATINGS

TIP33B

TIP34B

TIP33C

TIP34C

Rating

Symbol

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

80 V

100 V

80 WATTS

80 V

5.0

Collector Current — Continuous

Peak (1)

Base Current — Continuous

Total Power Dissipation

3.0

Adc

@ T = 25 C

0.64

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 340D–01

TO–218AC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.56

35.7

Unit

C/W

Thermal Resistance, Junction to Case

Junction–To–Free–Air Thermal Resistance

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

θJC

θJA

10%.

500

= 4.0 V

= 25°C

200

100

NPN

PNP

5.0

0.1

1.0

, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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