Datasheet > TIP32C

TIP32C

更新时间： 2024-11-26 08:48:39

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描述
Complementary Silicon Power Ttransistors

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TIP32C 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Ttransistors

TIP31C / TIP32C

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS

( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

Symbol

V_CBO

100

V_CEO

V_EBO

I_C

100

3.0

1.0

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

Test Conditions

V_CB=100V, I_E=0

Min.

Typ.

Max. Unit

I_CEO

0.3

1.0

I_EBO

V_CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_EB=5V, I_C=0

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=30mA, I_B=0

V_CE=4V, I_C=1.0A

V_CE=4V, I_C=3.0A

I_C=3A,I_B=300mA

V_CE=4V,I_C=3.0A

100

1.2

1.8

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

V_CE=10V,I_C=500mA

MHz

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