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TIP32BG PDF预览

TIP32BG

更新时间: 2024-11-23 12:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 87K
描述
Complementary Silicon Plastic Power Transistors

TIP32BG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.89
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz

TIP32BG 数据手册

 浏览型号TIP32BG的Datasheet PDF文件第2页浏览型号TIP32BG的Datasheet PDF文件第3页浏览型号TIP32BG的Datasheet PDF文件第4页浏览型号TIP32BG的Datasheet PDF文件第5页浏览型号TIP32BG的Datasheet PDF文件第6页 
TIP31, TIP31A, TIP31B, TIP31C,  
(NPN), TIP32, TIP32A, TIP32B,  
TIP32C, (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
40−60−80−100 VOLTS,  
40 WATTS  
Features  
Collector−Emitter Saturation Voltage −  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
Collector−Emitter Sustaining Voltage −  
V
= 40 Vdc (Min) − TIP31, TIP32  
= 60 Vdc (Min) − TIP31A, TIP32A  
= 80 Vdc (Min) − TIP31B, TIP32B  
= 100 Vdc (Min) − TIP31C, TIP32C  
CEO(sus)  
MARKING  
DIAGRAM  
High Current Gain − Bandwidth Product  
= 3.0 MHz (Min) @ I = 500 mAdc  
f
T
C
Compact TO−220 AB Package  
Pb−Free Packages are Available*  
4
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A  
STYLE 1  
TIP3xxG  
AYWW  
Symbol  
Value  
Unit  
Collector − Emitter Voltage TIP31, TIP32  
TIP31A, TIP32A  
V
40  
60  
80  
Vdc  
CEO  
1
2
3
TIP31B, TIP32B  
100  
TIP31C, TIP32C  
Collector−Base Voltage  
TIP31, TIP32  
TIP31A, TIP32A  
TIP31B, TIP32B  
TIP31C, TIP32C  
V
40  
60  
80  
Vdc  
CB  
TIP3xx = Device Code  
xx  
= 1, 1A, 1B, 1C,  
2, 2A, 2B, 2C,  
= Assembly Location  
= Year  
100  
Emitter−Base Voltage  
Collector Current  
V
5.0  
Vdc  
Adc  
EB  
A
Y
Continuous  
Peak  
I
3.0  
5.0  
C
B
WW  
G
= Work Week  
Pb−Free Package  
Base Current  
I
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25_C  
40  
0.32  
C
W
W/_C  
ORDERING INFORMATION  
Derate above 25_C  
See detailed ordering and shipping information in the package  
Total Power Dissipation  
P
dimensions section on page 2 of this data sheet.  
D
@ T = 25_C  
2.0  
0.016  
A
W
Derate above 25_C  
W/_C  
Unclamped Inductive Load Energy (Note 1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
_C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W  
C
CC  
BE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 10  
TIP31A/D  

TIP32BG 替代型号

型号 品牌 替代类型 描述 数据表
TIP30CG ONSEMI

类似代替

1.0 A,100 V,PNP 双极功率晶体管
TIP29BG ONSEMI

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Complementary Silicon Plastic Power Transistors
TIP29AG ONSEMI

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Complementary Silicon Plastic Power Transistors

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