Datasheet > TIP32A

TIP32A

更新时间： 2024-02-02 23:33:23

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	38K
描述
Si-Epitaxial PlanarTransistors

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TIP32A 数据手册

TIP32, TIP32A ... C

General Purpose Transistors

Si-Epitaxial PlanarTransistors PNP

PNP

Version 2004-06-29

Collector current – Kollektorstrom

3 A

Plastic case

TO-220AB

Kunststoffgehäuse

Weight approx. – Gewicht ca.

2.2 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging in tubes

Standard Lieferform in Stangen

1 = B 2 = C 3 = E

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

TIP32 TIP32A TIP32B TIP32C

Collector-Emitter-voltage

Emitter-Base-voltage

B open

- V_CE0

40 V

60 V

80 V

100 V

B shorted - V_CES

C open

- V_EB0

5 V

Power dissipation – Verlustleistung

without cooling – ohne Kühlung

P_tot

T_C=25°C P_tot

2 W ¹)

40 W

with cooling – mit Kühlung

Collector current – Kollektorstrom

- I_C

3 A (dc)

Peak Collector current

Kollektor-Spitzenstrom

- I_CM

5 A

Base current – Basisstrom

- I_B

T_j

1 A

150°C

Junction temp. – Sperrschichttemp.

Storage temp. – Lagerungstemperatur

T_S

- 65…+ 150°C

Characteristics, T_j= 25°C

Kennwerte, T_j= 25°C

Min.

Typ.

Max.

1.2 V

1.8

Collector saturation volt. – Kollektor-Sättigungsspannung

- I_C= 3 A, - I_B= 375 mA

- V_CEsat

–

Base-Emitter voltage – Basis-Emitter-Spannung

- V_CE= 4 V, - I_C= 3 A

- V_BEon

DC current gain – Kollektor-Basis-Stromverhältnis

- V_CE= 4 V, - I_C= 1 A

- V_CE= 4 V, - I_C= 3 A

h_FE

–

)

Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

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