Datasheet > TIP32

TIP32

更新时间： 2024-11-05 14:53:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
18页	509K
描述
40V,3A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

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替代型号

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TIP32 数据手册

TIP32

TIP32A

TIP32B

TIP32C

www.centralsemi.com

DESCRIPTION:

SILICON

PNP POWER TRANSISTORS

The CENTRAL SEMICONDUCTOR TIP32 series devices

are silicon PNP epitaxial-base power transistors designed

for power amplifier and high speed switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL TIP32 TIP32A TIP32B TIP32C UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

CBO

CEO

EBO

100

5.0

3.0

5.0

1.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (T =25°C)

2.0

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

62.5

°C

°C/W

stg

Thermal Resistance

3.13

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V (TIP32, TIP32A)

0.3

0.2

1.0

CEO

CES

EBO

=60V (TIP32B, TIP32C)

=Rated V

=5.0V

CEO

I =30mA (TIP32)

CEO

CE(SAT)

BE(ON)

I =30mA (TIP32A)

I =30mA (TIP32B)

I =30mA (TIP32C)

100

I =3.0A, I =375mA

1.2

1.8

=4.0V, I =3.0A

=4.0V, I =1.0A

3.0

=4.0V, I =3.0A

=10V, I =0.5A, f=1.0kHz

=10V, I =0.5A, f=1.0MHz

MHz

μs

I =1.0A, I =I =0.1A, R =30Ω

0.3

1.0

off

B1 B2

I =1.0A, I =I =0.1A, R =30Ω

μs

B1 B2

R1 (12-June 2014)

12 3 4 5 6 7...18

中文翻译

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TIP32 替代型号

型号	品牌	替代类型	描述	数据表
TIP29BG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transistors

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