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TIP32 PDF预览

TIP32

更新时间: 2024-11-08 14:53:11
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
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2页 862K
描述
双极型晶体管

TIP32 数据手册

 浏览型号TIP32的Datasheet PDF文件第2页 
TIP32/32A/32B/32C  
TO-220 Transistor (PNP)  
TO-220  
1. BASE  
2. COLLECTOR  
3. EMITTER  
3
2
1
Features  
—
Medium Power Linear Switching Applications  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Dimensions in inches and (millimeters)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
TIP32  
-40  
TIP32A  
-60  
TIP32B  
-80  
TIP32C  
-100  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
-60  
-80  
-100  
V
-5  
-3  
2
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
A
PC  
W
Tj  
150  
-55to+150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
TIP32  
TIP32A  
TIP32B  
TIP32C  
-40  
-60  
V(BR)CBO IC= -1mA, IE=0  
V
-80  
-100  
Collector-emitter breakdown voltage *  
TIP32  
-40  
-60  
-80  
-100  
-5  
TIP32A  
TIP32B  
TIP32C  
V(BR)CEO IC= -30mA, IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO IE= -1mA, IC=0  
VCB=-40V,IE=0  
TIP32  
TIP32A  
VCB=-60V, IE=0  
VCB=-80V, IE=0  
VCB=-100V, IE=0  
ICBO  
-200  
μA  
TIP32B  
TIP32C  
ICEO  
VCE= -30V, IB= 0  
CE= -60V, IB= 0  
Collector cut-off current  
TIP32/32A  
TIP32B/32C  
-0.3  
-1  
mA  
mA  
V
Emitter cut-off current  
DC current gain  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(on)  
fT  
VEB=-5V, IC=0  
VCE= -4V, IC=-1A  
VCE=-4 V, IC=-3A  
IC=-3A, IB=-0.375A  
VCE=-4V, IC=-3A  
VCE=-10V , IC=-0.5A  
25  
10  
50  
Collector-emitter saturation voltage  
Base-emitter voltage  
-1.2  
-1.8  
V
V
Transition frequency  
3
MHZ  
* Pulse Test: PW300µs, Duty Cycle2%  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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