TIP32/32A/32B/32C
TO-220 Transistor (PNP)
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
Medium Power Linear Switching Applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
TIP32
-40
TIP32A
-60
TIP32B
-80
TIP32C
-100
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-60
-80
-100
V
-5
-3
2
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
A
PC
W
℃
℃
Tj
150
-55to+150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
TIP32
TIP32A
TIP32B
TIP32C
-40
-60
V(BR)CBO IC= -1mA, IE=0
V
-80
-100
Collector-emitter breakdown voltage *
TIP32
-40
-60
-80
-100
-5
TIP32A
TIP32B
TIP32C
V(BR)CEO IC= -30mA, IB=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO IE= -1mA, IC=0
VCB=-40V,IE=0
TIP32
TIP32A
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
ICBO
-200
μA
TIP32B
TIP32C
ICEO
VCE= -30V, IB= 0
CE= -60V, IB= 0
Collector cut-off current
TIP32/32A
TIP32B/32C
-0.3
-1
mA
mA
V
Emitter cut-off current
DC current gain
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
fT
VEB=-5V, IC=0
VCE= -4V, IC=-1A
VCE=-4 V, IC=-3A
IC=-3A, IB=-0.375A
VCE=-4V, IC=-3A
VCE=-10V , IC=-0.5A
25
10
50
Collector-emitter saturation voltage
Base-emitter voltage
-1.2
-1.8
V
V
Transition frequency
3
MHZ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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