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TIP31E

更新时间: 2024-11-04 03:59:43
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
6页 89K
描述
NPN SILICON POWER TRANSISTORS

TIP31E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.66外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

TIP31E 数据手册

 浏览型号TIP31E的Datasheet PDF文件第2页浏览型号TIP31E的Datasheet PDF文件第3页浏览型号TIP31E的Datasheet PDF文件第4页浏览型号TIP31E的Datasheet PDF文件第5页浏览型号TIP31E的Datasheet PDF文件第6页 
TIP31D, TIP31E, TIP31F  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
AUGUST 1978 - REVISED MARCH 1997  
40 W at 25°C Case Temperature  
3 A Continuous Collector Current  
5 A Peak Collector Current  
TO-220 PACKAGE  
(TOP VIEW)  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP31D  
TIP31E  
TIP31F  
TIP31D  
TIP31E  
TIP31F  
160  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
180  
V
200  
120  
VCEO  
140  
V
160  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
3
5
A
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
40  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
32  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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