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TIP30A PDF预览

TIP30A

更新时间: 2024-09-14 14:51:23
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
4页 492K
描述
60V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

TIP30A 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.29
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP30A 数据手册

 浏览型号TIP30A的Datasheet PDF文件第2页浏览型号TIP30A的Datasheet PDF文件第3页浏览型号TIP30A的Datasheet PDF文件第4页 
TIP30  
TIP30A  
TIP30B  
TIP30C  
www.centralsemi.com  
DESCRIPTION:  
SILICON  
PNP POWER TRANSISTORS  
The CENTRAL SEMICONDUCTOR TIP30 series devices  
are silicon PNP epitaxial-base power transistors designed  
for power amplifier and high speed switching applications.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL TIP30 TIP30A TIP30B TIP30C UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
40  
60  
80  
100  
V
CBO  
CEO  
EBO  
40  
60  
80  
100  
V
5.0  
1.0  
3.0  
0.4  
30  
V
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
A
CM  
I
A
B
P
W
W
°C  
D
D
Power Dissipation (T =25°C)  
A
Operating and Storage Junction Temperature  
P
2.0  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=30V (TIP30, TIP30A)  
0.3  
0.3  
0.2  
1.0  
mA  
CEO  
CEO  
CES  
EBO  
CE  
CE  
CE  
EB  
=60V (TIP30B, TIP30C)  
mA  
mA  
mA  
V
=Rated V  
=5.0V  
CEO  
BV  
BV  
BV  
BV  
I =30mA (TIP30)  
40  
60  
CEO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =30mA (TIP30A)  
V
C
I =30mA (TIP30B)  
80  
V
C
I =30mA (TIP30C)  
100  
V
C
V
V
I =1.0A, I =125mA  
0.7  
1.3  
V
C
B
V
=4.0V, I =1.0A  
V
CE  
CE  
CE  
CE  
CE  
C
h
h
h
V
V
V
V
=4.0V, I =0.2A  
40  
15  
20  
3.0  
C
=4.0V, I =1.0A  
75  
FE  
C
=10V, I =0.2A, f=1.0kHz  
fe  
C
f
t
t
=10V, I =0.2A, f=1.0MHz  
MHz  
μs  
T
C
I =1.0A, I = I =0.1A, R =30Ω  
0.3  
1.0  
on  
off  
C
B1 B2  
L
I =1.0A, I = I =0.1A, R =30Ω  
μs  
C
B1 B2  
L
R1 (12-March 2014)  

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