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TIP3055

更新时间： 2024-11-26 08:48:43

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关 PC 局域网
页数	文件大小	规格书
4页	107K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

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TIP3055 数据手册

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by TIP3055/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose switching and amplifier applications.

•

DC Current Gain — h = 20–70 @ I = 4.0 Adc

FE C

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

Collector–Emitter Saturation Voltage — V

Excellent Safe Operating Area

= 1.1 Vdc (Max) @ I = 4.0 Adc

CE(sat)

MAXIMUM RATINGS

60 VOLTS

Rating

Symbol

Value

Unit

Vdc

Adc

90 WATTS

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

CER

100

7.0

1 5

7.0

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.72

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

CASE 340D–01

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.39

35.7

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

1000

100

= 4.0 V

= 25°C

TIP3055

TIP2955

0.1

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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TIP30-6203	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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TIP30-6258	RENESAS	获取价格	3A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB