Datasheet > TIP127

TIP127

更新时间： 2024-06-27 12:06:04

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
3页	340K
描述
TO-220

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TIP127 数据手册

TIP125/TIP126/TIP127

PNP DARLINGTON TRANSISTOR

FEATURES

 Medium power silicon transistors

 Complementary TIP120/TIP121/TIP122

MECHANICAL DATA



Case: TO-220

Case material: Molded plastic. UL flammability 94V-0

Weight:2.30grams(approximate)

TO-220

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

TIP125

-60

TIP126

TIP127

-100

Unit

-80

Collector-emitter voltage

-60

-80

-100

Emitter-base voltage

-5

Collector current -continuous

Collector power dissipation

Thermal resistance junction to ambient

P^C

R^θJA

R^θJc

T^J

62.5

1.92

150

°C/W

°C

Thermal resistance junction to case

Junction temperature

Storage temperature

T^stg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min

-60

Max Unit

Conditions

TIP125

TIP126

TIP127

TIP125

TIP126

TIP127

TIP125

TIP126

TIP127

TIP125

TIP126

TIP127

Collector-base breakdown

voltage

V^(BR)CBO

-80

I^C=-1mA,I^E=0

-100

-60

Collector-emitter breakdown

voltage

V^CEO(SUS)

-80

I^C=-30mA,I^B=0

V^CB=-60 V, I^E=0

-100

Collector cut-off current

I^CBO

-0.2

mA V^CB=-80 V, I^E=0

V^CB=-100V, I^E=0

V^CE=-30 V, I^B=0

ICEO

-0.5

-2

mA V^CE=-40 V, I^B=0

V^CE=-50 V, I^B=0

Emitter cut-off current

DC current gain

I^EBO

h^FE(1)

h^FE(2)

mA V^EB=-5 V, I^C=0

V^CE=-3V, I^C=-0.5A

V^CE=-3V, I^C=-3A

1000

-2

-4

I^C=-3A,I^B=-12mA

Collector-emitter saturation voltage

V^CE(sat)

I^C=-5 A,I^B=-20mA

Base-emitter voltage

Output capacitance

V^BE

-2.5

300

V^CE=-3V, I^C=-3 A

Cob

pF V^CB=-10V,I^E=0,f=0.1MHz

1^{/ 3}

©GUANGDONGHOTTECHINDUSTRIALCO.,LTD

E-mail:hkt@heketai.com

12 3

中文翻译

下载PDF

与TIP127相关器件

型号	品牌	获取价格	描述	数据表
TIP127_08	FAIRCHILD	获取价格	PNP Epitaxial Darlington Transistor
TIP127_09	UTC	获取价格	PNP EPITAXIAL TRANSISTOR
TIP127_15	UTC	获取价格	PNP EPITAXIAL TRANSISTOR
TIP12716	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP12716A	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP127-6200	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6203	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6226	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP127-6255	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP127-6258	RENESAS	获取价格	8A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB