Datasheet > TIP125_07

TIP125_07

更新时间： 2024-11-04 04:28:27

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管
页数	文件大小	规格书
2页	110K
描述
Si-Epitaxial Planar Darlington Power Transistors

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TIP125_07 数据手册

TIP125 ... TIP127

Si-Epitaxial Planar Darlington Power Transistors

Si-Epitaxial Planar Darlington-Leistungs-Transistoren

PNP

Version 2006-10-17

10^±0.2

Max. power dissipation with cooling

Max. Verlustleistung mit Kühlung

65 W

3.8

Collector current

Kollektorstrom

5 A

TO-220AB

2.2 g

Type

Typ

Plastic case

Kunststoffgehäuse

1 2 3

Weight approx.

Gewicht ca.

1.5

0.9

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

2.54

Standard packaging in tubes

Standard Lieferform in Stangen

Dimensions - Maße [mm]

1 = B 2/4 = C 3 = E

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

TIP125

60 V

TIP126

80 V

TIP127

100 V

Collector-Emitter-volt. – Kollektor-Emitter-Spg.

Collector-Base-voltage – Kollektor-Basis-Spg.

B open

E open

- V_CEO

- V_CBO

- V_EBO

60 V

80 V

100 V

Emitter-Base-voltage – Emitter-Basis-Spannung C open

Power dissipation – Verlustleistung

5 V

without cooling – ohne Kühlung

with cooling – mit Kühlung

T_A= 25°C

T_C= 25°C

P_tot

2 W ¹)

65 W

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Base current – Basisstrom (dc)

- I_C

- I_CM

- I_B

5 A

8 A

120 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-55...+150°C

-55…+150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis ²)

- I_C= 0.5 A, - V_CE= 3 V

- I_C= 3 A, - V_CE= 3 V

h_FE

1000

–

Small signal current gain – Kleinsignal-Stromverstärkung

- I_C= 3 A, - V_CE= 4 V, f = 1 MHz

h_fe

Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

Tested with pulses t_p= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t_p= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

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