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TIP125 PDF预览

TIP125

更新时间: 2024-11-04 07:04:31
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无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
4页 171K
描述
Silicon PNP Darlington Power Transistors

TIP125 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon PNP Darlington Power Transistors  
TIP125/126/127  
DESCRIPTION  
·With TO-220C package  
·DARLNGTON  
·High DC durrent gain  
·Low collector saturation voltage  
·Complement to type TIP120/121/122  
APPLICATIONS  
·Designed for general–purpose amplifier  
and low–speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
TIP125  
TIP126  
TIP127  
TIP125  
TIP126  
TIP127  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current-DC  
Open collector  
V
A
-5  
-8  
A
-120  
65  
mA  
TC=25  
Ta=25℃  
PC  
Collector power dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  

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