Datasheet > TIP120

TIP120

更新时间： 2024-11-04 18:05:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
3页	448K
描述
TO-220

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中文翻译

获取价格

数据手册

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TIP120 数据手册

TIP120/TIP121/TIP122

NPN DARLINGTON TRANSISTOR

FEATURES

 Medium power silicon transistors

 Complementary TIP125/TIP126/TIP127

MECHANICAL DATA



Case: TO-220

Case material: Molded plastic. UL flammability 94V-0

Weight:2.30grams(approximate)

TO-220

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

TIP120

TIP121

TIP122

100

Unit

Collector-emitter voltage

100

Emitter-base voltage

Collector current -continuous

Collector power dissipation

Thermal resistance junction to ambient

P^C

R^θJA

R^θJc

T^J

62.5

°C/W

°C

Thermal resistance junction to case

Junction temperature

1.92

150

Storage temperature

T^stg

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min

Max Unit

Conditions

TIP120

TIP121

TIP122

TIP120

TIP121

TIP122

TIP120

TIP121

TIP122

TIP120

TIP121

TIP122

Collector-base breakdown

voltage

V^(BR)CBO

I^C= 1mA,I^E=0

100

Collector-emitter breakdown

voltage

V^CEO(SUS)

I^C= 30mA,I^B=0

V^CB= 60 V, I^E=0

100

Collector cut-off current

I^CBO

0.2

mA V^CB= 80 V, I^E=0

V^CB= 100V, I^E=0

V^CE=30 V, I^B=0

ICEO

V^CE=40 V, I^B=0

V^CE=50 V, I^B=0

0.5

Emitter cut-off current

DC current gain

I^EBO

h^FE(1)

h^FE(2)

mA V^EB=5 V, I^C=0

V^CE= 3V, I^C=0.5A

V^CE= 3V, I^C=3 A

1000

I^C=3A,I^B=12mA

Collector-emitter saturation voltage

V^CE(sat)

I^C=5 A,I^B=20mA

Base-emitter voltage

Output capacitance

V^BE

2.5

300

V^CE=3V, I^C=3 A

Cob

pF V^CB=10V,I^E=0,f=0.1MHz

1^{/ 3}

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