Datasheet > TIP112NPN

TIP112NPN

更新时间： 2024-11-05 01:01:47

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
3页	271K
描述
PLASTIC POWER TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TIP112NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

PLASTIC POWER TRANSISTORS

TIP110 TIP115

TIP111 TIP116

TIP112 TIP117

NPN

PNP

TO-220

Plastic Package

Intended for use in Medium Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)

TIP110/115

TIP111/116

TIP112/117

100

DESCRIPTION

SYMBOL

UNIT

V_CEO

Collector Emitter Voltage

V_CBO

V_EBO

I_C

100

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Current Peak

Base Current

I_CM

I_B

Power Dissipation upto T_c=25ºC

Power Dissipation upto T_a=25ºC

P_D

Derate above 25ºC

Operating And Storage

Junction Temperature

mW/ºC

T_j, T_stg

-65 to +150

ºC

THERMAL RESISTANCE

Junction to Case

R_{th (j-c)}

R_{th (j-a)}

2.5

ºC/W

62.5

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

MIN

MAX

2.0

DESCRIPTION

SYMBOL

TEST CONDITION

V_CE= Half Rated V_CEO

V_CB= Half Rated V_CBO

V_EB=5V, I_C=0

UNIT

Collector Cut Off Current

Emitter Cut Off Current

Collector Emitter (sus) Voltage

CEO

1.0

CBO

2.0

EBO

*V_CEO(sus)

I_C=30mA, I_B=0

TIP110/115

TIP111/116

TIP112/117

100

Collector Emitter Saturation

Voltage

*V_{CE (sat)}

I_C=2A, I_B=8mA

2.5

2.8

BE(on)

I_C=2A,V_CE=4V

I_C=1A,V_CE=4V

I_C=2A,V_CE=4V

Base Emitter On Voltage

DC Current Gain

*h_FE

1,000

500

*Pulse Test : Pulse width =300ms, Duty Cycle <2%

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

下载PDF

与TIP112NPN相关器件

型号	品牌	获取价格	描述	数据表
TIP112S	MOTOROLA	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112T	MOTOROLA	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112-TA3-T	UTC	获取价格	Transistor
TIP112TU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 10
TIP112TU	ONSEMI	获取价格	NPN Epitaxial Silicon Darlington Transistor, 1000-TUBE
TIP112U	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP112U2	MOTOROLA	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112UA	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP112W	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP112WD	MOTOROLA	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB