生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | compliant | 风险等级: | 5.63 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 0.06 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 500 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP112L-T60-K | UTC |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
TIP112L-TA3-T | UTC |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
TIP112L-TN3-R | UTC |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
TIP112L-TN3-T | UTC |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
TIP112N | MOTOROLA |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112NPN | CDIL |
获取价格 |
PLASTIC POWER TRANSISTORS | |
TIP112S | MOTOROLA |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112T | MOTOROLA |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112-TA3-T | UTC |
获取价格 |
Transistor | |
TIP112TU | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 10 |