Datasheet > TIP110_11

TIP110_11

更新时间： 2024-11-03 08:48:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	226K
描述
Silicon NPN Darlington Power Transistor

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中文翻译

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数据手册

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TIP110_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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TIP110/111/112

Micro Commercial Components

Features

•

The complementary PNP types are the TIP115/116/117 respectively

Silicon NPN

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Darlington

Power Transistor

•

Marking: Part number

Absolute Maximum Ratings @ T

= 25℃(unless otherwise noted)

TO-220AB

Symbol

V_CBO

TIP110

TIP111

TIP112

VCEO

TIP110

TIP111

TIP112

Parameter

Value

Unit

100

Collector-base voltage

(Open emitter)

100

Collector-emitter voltage

(Open base)

V_EBO

Emitter-base Voltage(Open collector)

I_C

I_CM

I_B

Collector Current

0.05

Collector Current Pulse

Base Current

Total Device Dissipation(Ta=25℃)

Total Device Dissipation(Tc=25℃)

Junction Temperature

℃

150

P_C

T_J

T_STG

Storage Temperature Range

-65 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

V_CEO(SUS)

TIP110

TIP111

TIP112

100

Collector-emitter sustaining voltage

( I_C=30mA; I_B=0)

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

Collector-emitter Saturation Voltage

( I_C=2A I_B=-0.008A )

DIMENSIONS

VCE(sat)

V_BE

2.5

2.8

INCHES

MIN

14.22

9.65

MAX

15.88

10.67

NOTE

DIM

MIN

MAX

.625

Base-emitter Voltage

( I_C=2A ; V_CE=4V )

Collector cut-off current

(V_CB=60V; I_E=0)

.560

.380

.140

.420

.190

I_CBO

3.56

4.82

TIP110

TIP111

TIP112

I_CEO

TIP110

TIP111

TIP112

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

(V_CB=80V; I_E=0)

(V_CB=100V; I_E=0)

Collector cut-off current

(V_CE=30V; V_EB=0)

(V_CE=40V; V_EB=0)

(V_CE=50V; V_EB=0)

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

Emitter cut-off current

(V_EB=5V; I_C=0)

DC current gain

.190

.210

4.83

5.33

I_EBO

H_fe

2.0

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

1000

500

(I_C=1A ; V_CE=4V)

(I_C=2A ; V_CE=4V)

Output capacitance

( I_E=0 ; V_CB=-10V,f=0.1MHz )

100

C_OB

.045

1.15

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与TIP110_11相关器件

型号	品牌	获取价格	描述	数据表
TIP11016	MOTOROLA	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP11016A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP110-6200	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6203	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6226	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6255	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6258	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6261	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP110-6263	RENESAS	获取价格	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP110-6264	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

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