TIP107S

更新时间： 2024-11-03 13:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管局域网
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数据手册

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TIP107S 数据手册

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by TIP100/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 30 mAdc

•

= 60 Vdc (Min) — TIP100, TIP105

= 80 Vdc (Min) — TIP101, TIP106

= 100 Vdc (Min) — TIP102, TIP107

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

= 2.5 Vdc (Max) @ I = 8.0 Adc

•

Monolithic Construction with Built–in Base–Emitter Shunt Resistors

TO–220AB Compact Package

*MAXIMUM RATINGS

*Motorola Preferred Device

TIP100,

TIP105

TIP101,

TIP106

TIP102,

TIP107

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

80 WATTS

CEO

100

5.0

Collector Current — Continuous

Peak

8.0

Adc

Base Current

1.0

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.64

Watts

W/ C

Unclamped Inductive Load Energy (1)

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.56

62.5

θJC

CASE 221A–06

TO–220AB

θJA

(1) I = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V

= 20 V, R = 100 Ω.

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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TIP107UA	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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TIP110	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors