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TIP106

更新时间: 2024-11-18 22:42:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体电阻器晶体管局域网
页数 文件大小 规格书
4页 53K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP106 数据手册

 浏览型号TIP106的Datasheet PDF文件第2页浏览型号TIP106的Datasheet PDF文件第3页浏览型号TIP106的Datasheet PDF文件第4页 
TIP105/106/107  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h =1000 @ V = -4V, I = -3A (Min.)  
Collector-Emitter Sustaining Voltage  
Low Collector-Emitter Saturation Voltage  
Industrial Use  
Complementary to TIP100/101/102  
FE CE C  
TO-220  
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP105  
- 60  
- 80  
- 100  
V
V
V
CBO  
CEO  
EBO  
: TIP106  
: TIP107  
B
Collector-Emitter Voltage : TIP105  
- 60  
- 80  
- 100  
V
V
V
: TIP106  
: TIP107  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 5  
V
A
R1  
R2  
I
I
I
- 8  
- 15  
C
E
R1 10 k  
R2 0.6 k Ω  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
2
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
80  
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP105  
: TIP106  
: TIP107  
I
= -30mA, I = 0  
-60  
-80  
-100  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP105  
CEO  
V
V
V
= -30V, I = 0  
-50  
-50  
-50  
µA  
µA  
µA  
CE  
CE  
CE  
B
: TIP106  
: TIP107  
= -40V, I = 0  
B
= -50V, I = 0  
B
I
Collector Cut-off Current  
: TIP105  
CBO  
V
V
V
= -60V, I = 0  
-50  
-50  
-50  
µA  
µA  
µA  
CB  
CB  
CB  
E
: TIP106  
: TIP107  
= -80V, I = 0  
E
= -100V, I = 0  
E
I
Emitter Cut-off Current  
DC Current Gain  
V
= -5V, I = 0  
-2  
mA  
EBO  
BE  
C
h
V
V
= -4V, I = -3A  
1000 20000  
200  
FE  
CE  
CE  
C
= -4V, I = -8A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= -3A, I = -6mA  
-2  
-2.5  
V
V
CE  
BE  
C
C
B
= -8A, I = -80mA  
B
V
(on)  
Base-Emitter ON Voltage  
Output Capacitance  
V
= -4V, I = -8A  
-2.8  
300  
V
CE  
CB  
C
C
V
= -10V, I = 0, f = 0.1MHz  
pF  
ob  
E
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

TIP106 替代型号

型号 品牌 替代类型 描述 数据表
TIP106G ONSEMI

完全替代

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