型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TIM0910-4 | TOSHIBA |
功能相似 |
MICROWAVE POWER GaAs FET | |
TIM0910-15L | TOSHIBA |
功能相似 |
MICROWAVE POWER GAAS FET | |
TIM0910-2 | TOSHIBA |
功能相似 |
MICROWAVE POWER GaAs FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIM0910-15L | TOSHIBA |
获取价格 |
MICROWAVE POWER GAAS FET | |
TIM0910-2 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM0910-20 | TOSHIBA |
获取价格 |
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET | |
TIM0910-4 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM0910-5 | TOSHIBA |
获取价格 |
MICROWAVE SEMICONDUCTOR TECHNICAL DATA | |
TIM0910-8 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAS FET | |
TIM1011-10 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | |
TIM1011-10L | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1011-15 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power | |
TIM1011-15L | TOSHIBA |
获取价格 |
P1dB=42.0dBm at 10.7GHz to 11.7GHz |