TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
Gallium-Arsenide-Diode Infrared Source
High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
Source Is Optically Coupled to Silicon npn
Phototransistor
Plastic Dual-In-Line Packages
UL Listed — File #E65085
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL193
TIL191
1
16
1ANODE
1
1COLLECTOR
4
3
ANODE
COLLECTOR
EMITTER
15
14
1EMITTER
2
3
1CATHODE
2ANODE
2
CATHODE
2COLLECTOR
13
12
4
5
TIL192
2EMITTER
2CATHODE
3ANODE
1
8
1ANODE
1COLLECTOR
3COLLECTOR
7
6
11
10
1EMITTER
2
3
3EMITTER
6
7
1CATHODE
2ANODE
3CATHODE
4ANODE
2COLLECTOR
3COLLECTOR
5
4
9
8
2EMITTER
2CATHODE
3EMITTER
4CATHODE
†
absolute maximum ratings at 25°C free-air (unless otherwise noted)
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Thisratingappliesforsine-waveoperationat50Hzor60Hz.ThiscapabilityisverifiedbytestinginaccordancewithULrequirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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