Datasheet > TIC201

TIC201

更新时间： 2024-02-19 15:39:23

品牌	Logo	应用领域
POINN		可控硅三端双向交流开关
页数	文件大小	规格书
4页	71K
描述
SILICON TRIACS

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数据手册

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TIC201 数据手册

TIC201 SERIES

SILICON TRIACS

JANUARY 1977 - REVISED MARCH 1997

●

Sensitive Gate Triacs

2.5 A RMS

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

MT1

MT2

Max I of 5 mA (Quadrant 1)

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC201D

TIC201M

TIC201S

TIC201N

400

600

Repetitive peak off-state voltage (see Note 1)

V_DRM

700

800

Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)

Peak on-state surge current full-sine-wave (see Note 3)

Peak on-state surge current half-sine-wave (see Note 4)

Peak gate current

I_T(RMS)

I_TSM

I_GM

2.5

±0.2

Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 ms)

Average gate power dissipation at (or below) 85°C case temperature (see Note 5)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 1.6 mm from case for 10 seconds

T_L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at

the rate of 100 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.

Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.

Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted)

MIN

TYP

MAX

PARAMETER

TEST CONDITIONS

UNIT

Repetitive peak

off-state current

I_DRM

V_D= rated V_DRM

_supply= +12 V†

I_G= 0

T_C= 110°C

±1

R_L= 10 W

t_p(g)> 20 ms

Peak gate trigger

current

V_supply= +12 V†

V_supply= -12 V†

-8

I_GTM

-10

V_supply= +12 V†

0.9

-1.2

1.2

2.5

-2.5

Peak gate trigger

voltage

V_supply= +12 V†

V_supply= -12 V†

V_GTM

† All voltages are with respect to Main Terminal 1.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4

中文翻译

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与TIC201相关器件

型号	品牌	获取价格	描述	数据表
TIC201A	TI	获取价格	TRIAC, TRIAC,100V V(DRM),2.5A I(T)RMS,TO-220
TIC201B	TI	获取价格	TRIAC, TRIAC,200V V(DRM),2.5A I(T)RMS,TO-220
TIC201D	POINN	获取价格	SILICON TRIACS
TIC201E	TI	获取价格	TRIAC, TRIAC,500V V(DRM),2.5A I(T)RMS,TO-220
TIC201M	POINN	获取价格	SILICON TRIACS
TIC201N	POINN	获取价格	SILICON TRIACS
TIC201S	POINN	获取价格	SILICON TRIACS
TIC206	POINN	获取价格	SILICON TRIACS
TIC206	NJSEMI	获取价格	Thyristor TRIAC 600V 14A 3-Pin(3+Tab) TO-220AB
TIC206A	COMSET	获取价格	SILICON BIDIRECTIONAL TRIODE THYRISTOR

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