TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
12 A Continuous On-State Current
100 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
K
A
G
1
2
3
400 V to 800 V Off-State Voltage
Max I of 20 mA
GT
This series is currently available, but
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
400
600
700
800
400
600
700
800
12
UNIT
TIC126D
TIC126M
TIC126S
TIC126N
TIC126D
TIC126M
TIC126S
TIC126N
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM
V
VRRM
V
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
IT(RMS)
IT(AV)
A
A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
7.5
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
ITM
IGM
100
A
A
3
PGM
PG(AV)
TC
5
1
W
W
°C
°C
°C
-40 to +110
-40 to +125
230
Storage temperature range
Tstg
TL
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1