SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
•
•
•
•
•
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Ratings
Unit
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage
(see Note1)
VDRM
VRRM
IT(RMS)
100 200 300 400 500 600 700 800
V
V
A
Repetitive peak reverse voltage
Continuous on-state current at (or below)
70°C case temperature (see note2)
Average on-state current (180° conduction
angle) at(or below) 70°C case temperature
(see Note3)
100 200 300 400 500 600 700 800
12
IT(AV)
7.5
A
ITM
IGM
Surge on-state current (see Note4)
Peak positive gate current (pulse width
≤300 µs)
100
3
A
A
Peak power dissipation (pulse width ≤300
µs)
Average gate power dissipation (see
Note5)
PGM
5
1
W
W
PG(AV)
TC
Tstg
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
-40 to +110
-40 to +125
°C
°C
TL
230
°C
Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
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