生命周期: | Obsolete | 包装说明: | DFP, |
Reach Compliance Code: | unknown | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.67 |
其他特性: | REGISTER PRELOAD; POWER-UP RESET | 最大时钟频率: | 28.5 MHz |
JESD-30 代码: | R-GDFP-F24 | 专用输入次数: | 12 |
I/O 线路数量: | 端子数量: | 24 | |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 12 DEDICATED INPUTS, 0 I/O | 输出函数: | REGISTERED |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DFP |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
可编程逻辑类型: | OT PLD | 传播延迟: | 20 ns |
认证状态: | Not Qualified | 最大供电电压: | 5.5 V |
最小供电电压: | 4.5 V | 标称供电电压: | 5 V |
表面贴装: | YES | 技术: | TTL |
温度等级: | MILITARY | 端子形式: | FLAT |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIBPAL20R8-20MWB | TI |
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High-Performance Impact<TM> PAL<R> Circuits 24-CFP -55 to 125 | |
TIBPAL20R8-25C | TOSHIBA |
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MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS | |
TIBPAL20R8-25C | TI |
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LOW-POWER HIGH-PERFORMANCE IMPACT PAL CIRCUITS | |
TIBPAL20R8-25CFN | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R8-25CJT | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R8-25CNL | TI |
获取价格 |
OT PLD, 15ns, PQCC28 | |
TIBPAL20R8-25CNT | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R8-25CNT | ROCHESTER |
获取价格 |
OT PLD, 15ns, TTL, PDIP24, PLASTIC, DIP-24 | |
TIBPAL20R8-25CNT3 | ROCHESTER |
获取价格 |
OT PLD, | |
TIBPAL20R8-30MFKB | ROCHESTER |
获取价格 |
OT PLD, |