是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QLCC |
包装说明: | HQCCN, LCC28,.45SQ | 针数: | 28 |
Reach Compliance Code: | not_compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.89 |
架构: | PAL-TYPE | 最大时钟频率: | 28.5 MHz |
JESD-30 代码: | S-CQCC-N28 | 长度: | 11.43 mm |
专用输入次数: | 12 | I/O 线路数量: | 2 |
输入次数: | 14 | 输出次数: | 8 |
产品条款数: | 64 | 端子数量: | 28 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 12 DEDICATED INPUTS, 2 I/O | 输出函数: | MIXED |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | HQCCN |
封装等效代码: | LCC28,.45SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 可编程逻辑类型: | OT PLD |
传播延迟: | 25 ns | 认证状态: | Not Qualified |
筛选级别: | 38535Q/M;38534H;883B | 座面最大高度: | 2.03 mm |
子类别: | Programmable Logic Devices | 最大供电电压: | 5.25 V |
最小供电电压: | 4.75 V | 标称供电电压: | 5 V |
表面贴装: | YES | 技术: | TTL |
温度等级: | MILITARY | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 11.43 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIBPAL20R6-20MJT | TI |
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HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R6-20MJTB | TI |
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High-Performance Impact PAL Circuits 24-CDIP -55 to 125 | |
TIBPAL20R6-20MW | TI |
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HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R6-25C | TOSHIBA |
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MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS | |
TIBPAL20R6-25C | TI |
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LOW-POWER HIGH-PERFORMANCE IMPACT PAL CIRCUITS | |
TIBPAL20R6-25CFN | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R6-25CFN | ROCHESTER |
获取价格 |
OT PLD, 25ns, TTL, PQCC28, PLASTIC, CC-28 | |
TIBPAL20R6-25CJT | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS | |
TIBPAL20R6-25CNL | ROCHESTER |
获取价格 |
OT PLD, 25ns, TTL, PQCC28 | |
TIBPAL20R6-25CNT | TI |
获取价格 |
LOW-POWER HIGH-PERFORMANCE IMPACT E PAL CIRCUITS |