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1N456T50A PDF预览

1N456T50A

更新时间: 2024-02-24 20:23:14
品牌 Logo 应用领域
德州仪器 - TI 二极管
页数 文件大小 规格书
2页 36K
描述
0.2A, SILICON, SIGNAL DIODE, DO-35

1N456T50A 技术参数

生命周期:Transferred包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.64
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1N456T50A 数据手册

 浏览型号1N456T50A的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
N
1N/FDLL 456/A - 1N/FDLL 459/A  
COLOR BAND MARKING  
DEVICE 1ST BAND 2ND BAND  
FDLL456  
FDLL456A BROWN  
BROWN  
WHITE  
WHITE  
BLACK  
BLACK  
BROWN  
BROWN  
RED  
FDLL457 RED  
FDLL457A RED  
FDLL458 RED  
FDLL458A RED  
RED  
FDLL459A RED  
LL-34  
FDLL459  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
DO-35  
RED  
High Conductance Low Leakage Diode  
Sourced from Process 1M.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
456/A  
457/A  
458/A  
459/A  
25  
60  
125  
175  
200  
V
V
V
V
mA  
IO  
Average Rectified Current  
DC Forward Current  
IF  
500  
600  
mA  
mA  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
Pulse width = 1.0 microsecond  
Storage Temperature Range  
if(surge)  
1.0  
4.0  
-65 to +200  
A
A
°C  
Tstg  
TJ  
Operating Junction Temperature  
175  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
1N / FDLL 456/A - 459/A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
500  
3.33  
300  
mW  
mW/°C  
°C/W  
Rθ  
JA  

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