Datasheet > 1N456A.TR

1N456A.TR

更新时间： 2023-02-26 14:50:21

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
2页	36K
描述
0.2A, 30V, SILICON, SIGNAL DIODE, DO-35

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数据手册

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1N456A.TR 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

1N/FDLL 456/A - 1N/FDLL 459/A

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL456

FDLL456A BROWN

BROWN

WHITE

BLACK

BROWN

RED

FDLL457 RED

FDLL457A RED

FDLL458 RED

FDLL458A RED

RED

FDLL459A RED

LL-34

FDLL459

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

RED

High Conductance Low Leakage Diode

Sourced from Process 1M.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

456/A

457/A

458/A

459/A

125

175

200

I_O

Average Rectified Current

DC Forward Current

I_F

500

600

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

4.0

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/°C

°C/W

R_θ

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