DGN−8
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THS4503−EP
SGLS291A − APRIL 2005 − JANUARY 2012
WIDEBAND, LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIERS
FEATURES
APPLICATIONS
D
High Linearity Analog-to-Digital Converter
Preamplifier
D
D
D
Controlled Baseline
One Assembly/Test Site, One Fabrication Site
D
D
D
D
Wireless Communication Receiver Chains
Single-Ended to Differential Conversion
Differential Line Driver
Enhanced Diminishing Manufacturing
Sources (DMS) Support
D
D
D
D
D
D
D
D
D
Enhanced Product-Change Notification
Active Filtering of Differential Signals
(1)
Qualification Pedigree
1
8
V
IN+
V
IN−
Fully Differential Architecture
Bandwidth: 370 MHz
2
7
V
OCM
NC
3
4
6
5
V
V
Slew Rate: 2800 V/μs
S+
S−
IMD : −95 dBc at 30 MHz
V
V
OUT−
3
OUT+
OIP : 51 dBm at 30 MHz
3
RELATED DEVICES
Output Common-Mode Control
(1)
DEVICE
DESCRIPTION
Wide Power Supply Voltage Range: 5 V, 5 V,
12 V, 15 V
THS4500/1
THS4502/3
THS4120/1
THS4130/1
THS4140/1
THS4150/1
370 MHz, 2800 V/μs, V
Includes V
ICR S−
370 MHz, 2800 V/μs, Centered V
ICR
D
Centered Input Common-Mode Range
Evaluation Module Available
3.3 V, 100 MHz, 43 V/μs, 3.7 nV√Hz
15 V, 150 MHz, 51 V/μs, 1.3 nV√Hz
D
(1)
Componentqualification in accordance with JEDEC and industry
standards to ensure reliable operation over an extended
temperaturerange. This includes, but is not limited to, Highly
Accelerated Stress Test (HAST) or biased 85/85, temperature
cycle, autoclave or unbiased HAST, electromigration, bond
intermetalliclife, and mold compound life.
15 V, 160 MHz, 450 V/μs, 6.5 nV√Hz
15 V, 150 MHz, 650 V/μs, 7.6 nV√Hz
(1)
Even numbered devices feature power-down capability
DESCRIPTION
The THS4503 is a high-performance fully differential amplifier from Texas Instruments. The THS4503, without
power-down capability, set new performance standards for fully differential amplifiers with unsurpassed linearity,
supporting 14-bit operation through 40 MHz. Package options include the 8-pin MSOP with PowerPAD™ for a smaller
footprint, enhanced ac performance, and improved thermal dissipation capability.
WARNING:
The THS4503 may have low−level oscillation when the die temperature (also known as the junction
temperature) exceeds 605C. These devices are not recommended for new designs where the die temperature
is expected to exceed 605C. For more information, see Maximum Die Temperature to Oscillation.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA
Copyright © 2005 − 2012, Texas Instruments Incorporated
information current as of publication date. Products conform to specifications per
the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.